The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Apr. 20, 2020
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
George T. Wang, Albuquerque, NM (US);
Keshab R. Sapkota, Albuquerque, NM (US);
Kevin S. Jones, Archer, FL (US);
Emily M. Turner, Gainesville, FL (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Abstract
A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.