The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Dec. 29, 2017
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Thomas Dyer Bonifield, Dallas, TX (US);
Kannan Soundarapandian, Southlake, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/60 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01G 4/012 (2006.01); H01G 4/08 (2006.01); H01L 21/283 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/60 (2006.01); H01G 4/30 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 27/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01G 4/012 (2013.01); H01G 4/08 (2013.01); H01G 4/30 (2013.01); H01L 21/02164 (2013.01); H01L 21/283 (2013.01); H01L 21/762 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/60 (2013.01); H01L 29/0649 (2013.01); H01L 23/53257 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 27/0629 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/48463 (2013.01);
Abstract
Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.