The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

May. 14, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungchul Kim, Hwaseong-si, KR;

Jaeho Kim, Seoul, KR;

Uihui Kwon, Hwaseong-si, KR;

Seoksan Kim, Suwon-si, KR;

Minwoong Seo, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/359 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14654 (2013.01); H01L 27/14609 (2013.01); H04N 5/3592 (2013.01);
Abstract

An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.


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