The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Dec. 07, 2018
National University Corporation Shizuoka University, Shizuoka, JP;
Shoji Kawahito, Shizuoka, JP;
Abstract
A photoelectric conversion element encompasses a depletion-layer extension-promotion region having a p-type upper layer, a p-type photoelectric conversion layer in contact with the depletion-layer extension-promotion region, and an n-type surface-buried region buried in an upper portion of the photoelectric conversion layer, configured to implement a photodiode together with the photoelectric conversion layer. A first p-well is surrounded by a first n-tab, the first n-tab is surrounded by a second p-well, the second p-well is surrounded by a second n-tab, and the second n-tab is surrounded by a third p-well. An injection-blocking element blocks injection of carriers of opposite conductivity type to signal charges from the second p-well into the photoelectric conversion layer, and the inside of the photoelectric conversion layer is depleted by a voltage applied to the depletion-layer extension-promotion region.