The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Jun. 14, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Matthias Stecher, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); H01L 21/02697 (2013.01); H01L 21/2885 (2013.01); H01L 21/32051 (2013.01); H01L 21/76871 (2013.01); H01L 21/76873 (2013.01); H01L 21/76885 (2013.01); H01L 21/7685 (2013.01); H01L 21/76807 (2013.01); H01L 21/76852 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 2924/0002 (2013.01);
Abstract
One or more embodiments are related to a semiconductor device, comprising: a metallization layer comprising a plurality of portions, each of the portions having a different thickness. The metallization layer may be a final metal layer.