The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Oct. 02, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ward Parkinson, Boise, ID (US);

James O'Toole, Boise, ID (US);

Nathan Franklin, Belmont, CA (US);

Thomas Trent, Tucson, AZ (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01);
Abstract

In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM device, is connected in series with a threshold switching selector, such as an ovonic threshold switch. In a two-layer cross-point structure with such memory cells, the MRAM devices in one layer are inverted relative to the MRAM devices in the other layer. This can allow for the transient voltage spike placed across the MRAM device when the threshold switching selector first turns on in a sensing operation to dissipate more rapidly, reducing the risk of changing a stored data state before it can be sensed.


Find Patent Forward Citations

Loading…