The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Jul. 20, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Katsumi Uryu, Tokyo, JP;

Tadaharu Minato, Tokyo, JP;

Takahiro Nakatani, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/20 (2020.01); H01L 29/06 (2006.01); G06F 119/02 (2020.01); H01L 29/739 (2006.01); G06F 117/06 (2020.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
G06F 30/20 (2020.01); G06F 2117/06 (2020.01); G06F 2119/02 (2020.01); H01L 29/0623 (2013.01); H01L 29/7397 (2013.01); H01L 29/868 (2013.01);
Abstract

A SEB resistance evaluation method includes: disposing an excitation source within a model of a semiconductor device; and determining an energy of the excitation source at which the semiconductor device exhibits thermal runaway, while varying a voltage applied to the model of the semiconductor device and the energy of the excitation source.


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