The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

May. 08, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

In-Soon Jo, Hwaseong-si, KR;

Young-Geun Choi, Suwon-si, KR;

Seung-Yeun Jeong, Anseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/0862 (2016.01); G06F 9/30 (2018.01); G06F 12/0877 (2016.01);
U.S. Cl.
CPC ...
G06F 12/0862 (2013.01); G06F 9/30101 (2013.01); G06F 12/0877 (2013.01); G06F 2212/6022 (2013.01);
Abstract

A memory device includes a memory cell array, an information register and a prefetch circuit. The memory cell array stores a valid data array, a base array and a target data array, where the valid data array includes valid elements among elements of first data, the base array includes position elements indicating position values corresponding to the valid elements and the target data array includes target elements of second data corresponding to the position values. The information register stores indirect memory access information including a start address of the target data array and a unit size of the target elements. The prefetch circuit prefetches, based on the indirect memory access information, the target elements corresponding to the position elements that are read from the memory cell array.


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