The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Aug. 10, 2016
Applicant:

Korea University Research and Business Foundation, Seoul, KR;

Inventors:

Jong Heun Lee, Seoul, KR;

Jee-Uk Yoon, Zurich, CH;

Jun-Sik Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/00 (2006.01); G01N 27/12 (2006.01); G01N 33/497 (2006.01); C01F 17/235 (2020.01); C01G 9/02 (2006.01); C01G 15/00 (2006.01); C01G 19/02 (2006.01); C01G 41/02 (2006.01); C01G 53/04 (2006.01); B82Y 15/00 (2011.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/12 (2013.01); C01F 17/235 (2020.01); C01G 9/02 (2013.01); C01G 15/00 (2013.01); C01G 19/02 (2013.01); C01G 41/02 (2013.01); C01G 53/04 (2013.01); G01N 27/127 (2013.01); G01N 33/497 (2013.01); B82Y 15/00 (2013.01); G01N 33/006 (2013.01);
Abstract

The present invention relates to a composite having the ability to stably and reliably detect a target gas even in a moist environment. The composite of the present invention includes: a nanostructure of an oxide semiconductor selected from the group consisting of SnO, ZnO, WO, NiO, and InO; and a CeOadditive loaded on the nanostructure. The oxide semiconductor nanostructure is uniformly loaded with CeO. The composite of the present invention can rapidly detect an analyte gas with high gas response irrespective of the presence and concentration of moisture. The present invention also relates to methods for preparing the composite, a gas sensor including the composite as a material for a gas sensing layer, and a method for fabricating the gas sensor.


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