The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Dec. 22, 2016
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

Pierre Blandin, Coublevi, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 15/14 (2006.01); G03H 1/04 (2006.01); G01N 15/00 (2006.01); G01N 15/10 (2006.01);
U.S. Cl.
CPC ...
G01N 15/1434 (2013.01); G01N 15/1475 (2013.01); G03H 1/0443 (2013.01); G03H 1/0465 (2013.01); G01N 2015/0053 (2013.01); G01N 2015/1006 (2013.01); G01N 2015/1454 (2013.01); G03H 2001/0447 (2013.01); G03H 2001/0452 (2013.01); G03H 2222/12 (2013.01);
Abstract

A method for observing a sample by lensless imaging, in which a sample is positioned between a laser diode and an image sensor, the laser diode being supplied with a supply current whose intensity is less than or equal to a critical value. This critical intensity is determined during preliminary operations, during which the intensity is initially greater than a laser threshold of the diode. By observing the image formed at the image sensor, the intensity is decreased until an attenuation of the interference images on the formed image is observed, the critical intensity corresponding to the intensity at which this attenuation is optimum.


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