The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jan. 25, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaewoo Park, Yongin-si, KR;
Youngdon Choi, Seoul, KR;
Junghwan Choi, Hwaseong-si, KR;
Changsik Yoo, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
IUCF-HYU (Industry-University Cooperation Four, Seoul, KR;
Abstract
Provided are a memory device and a memory system including the same. The memory device may include a data bus inversion (DBI) mode selector configured to select a first multi-bit DBI signal from among a plurality of multi-bit DBI signals respectively corresponding to a plurality of DBI modes according to multi-bit data; a multi-mode DBI encoder configured to generate encoded multi-bit data by DBI encoding the multi-bit data according to the first multi-bit DBI signal; and a transceiver configured to transmit a data symbol corresponding to the encoded multi-bit data through a data channel and transmit a DBI symbol corresponding to the first multi-bit DBI signal through a DBI channel.