The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Sep. 14, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shinji Sakai, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/493 (2007.01); H02M 1/088 (2006.01); H02M 1/32 (2007.01); H02M 7/00 (2006.01); H01L 23/367 (2006.01); H01L 25/18 (2006.01); H01L 27/02 (2006.01); H02H 1/00 (2006.01); H02H 3/02 (2006.01); H02H 3/16 (2006.01); H03K 17/082 (2006.01); H03K 17/28 (2006.01);
U.S. Cl.
CPC ...
H02M 7/493 (2013.01); H02M 1/088 (2013.01); H01L 23/367 (2013.01); H01L 25/18 (2013.01); H01L 27/0259 (2013.01); H01L 27/0266 (2013.01); H02H 1/0007 (2013.01); H02H 3/021 (2013.01); H02H 3/16 (2013.01); H02M 1/32 (2013.01); H02M 7/003 (2013.01); H03K 17/0828 (2013.01); H03K 17/28 (2013.01);
Abstract
Provided is a technique for reducing the size and cost of a semiconductor device. A semiconductor device includes an IGBT module having an IGBT, and a MOSFET module having a MOSFET whose operational property is different from that of the IGBT, the MOSFET module being connected to the IGBT module in parallel. The semiconductor device is capable of selectively executing an operation mode in which switching timing in the IGBT module and switching timing in the MOSFET module are non-identical.