The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Mar. 13, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Yuichi Ito, Yokkaichi Mie, JP;
Kouji Matsuo, Ama Aichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
According to one embodiment, a method for manufacturing a magnetoresistive memory device includes forming a first layer stack on a substrate. A second layer stack including a first ferromagnet is formed on the first layer stack. A mask including a first portion and an opening is formed above the second layer stack. The second layer stack is etched with an ion beam that travels through the opening. The first layer stack is etched by reactive ion etching through the opening.