The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Jun. 16, 2020
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Jin Zhang, Beijing, CN;

Yang Wei, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/42 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01); H01L 33/26 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/0012 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/26 (2013.01); H01L 33/32 (2013.01); H01L 33/60 (2013.01);
Abstract

The present disclosure relates to a light emitting diode. The light emitting diode comprises a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode, and a second electrode. The active layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is a first carbon nanotube, the second electrode is a second carbon nanotube. A first extending direction of the first carbon nanotube and a second extending direction of the second carbon nanotube are crossed with each other. A vertical p-n junction or a vertical p-i-n junction is formed by the first semiconductor layer and the second semiconductor layer in a direction perpendicular to the first semiconductor layer.


Find Patent Forward Citations

Loading…