Nitride semiconductor ultraviolet light-emitting element

Abstract

To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layerconstituting the nitride semiconductor light-emitting element, a plurality of thin film-like Ga-rich layers that is a part of the n-type layerhaving a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer, an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layerin an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer, AlN molar fractions of the Ga-rich layersare greater than AlN molar fraction of a well layerin an active layerconstituting the light-emitting element