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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11217722 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

Jul. 11, 2016

Hybrid growth method for iii-nitride tunnel junction devices

Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Erin C. Young, Santa Barbara, CA (US);

Benjamin P. Yonkee, Goleta, CA (US);

John T. Leonard, San Jose, CA (US);

Tal Margalith, Santa Barbara, CA (US);

James S. Speck, Santa Barbara, CA (US);

Steven P. DenBaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);

Attorney:

Gates & Cooper LLP

Primary Examiner:

Moazzam Hossain

Assistant Examiner:

Hajar Kolahdouzan

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/14 (2010.01); H01L 21/00 (2006.01); H01L 31/0304 (2006.01); C30B 23/02 (2006.01); C30B 29/68 (2006.01); H01S 5/40 (2006.01); C30B 25/20 (2006.01); H01L 33/04 (2010.01); C30B 29/40 (2006.01); H01S 5/30 (2006.01); H01L 31/147 (2006.01); H01L 33/06 (2010.01); H01S 5/026 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); C30B 23/025 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); C30B 29/68 (2013.01); H01L 21/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02631 (2013.01); H01L 31/03044 (2013.01); H01L 31/147 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01S 5/3095 (2013.01); H01S 5/4043 (2013.01); H01S 5/0262 (2013.01); H01S 5/183 (2013.01); H01S 5/34333 (2013.01); Y02E 10/544 (2013.01);
Abstract

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

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