The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jun. 02, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Shih-Hao Liu, Taoyuan, TW;
Chung-Ren Lao, Taichung, TW;
Chih-Cherng Liao, Jhudong Township, TW;
Wu-Hsi Lu, New Taipei, TW;
Ming-Cheng Lo, New Taipei, TW;
Wei-Lun Chung, Lukang Township, TW;
Chih-Wei Lin, Jhubei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.