The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jul. 31, 2019
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Vivek Ningaraju, Mysore, IN;
Po-An Chen, Toufen, TW;
Nuvoton Technology Corporation, Hsinchu Science Park, TW;
Abstract
A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type. A first well region is disposed on the semiconductor substrate and has the first conductivity type. A second well region is adjacent to the first well region and has a second conductivity type opposite to the first conductivity type. A first source region and a first drain region is respectively disposed in the first well region and the second well region, wherein the first source region and the first drain region has the second conductivity type. A first gate structure is disposed on the first well region and the second well region, and a buried layer is disposed in the semiconductor substrate and has the first conductivity type, wherein the buried layer is overlapped with the first well region and the second well region, and the buried layer is directly below the first source region.