The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
May. 15, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Deokhan Bae, Hwaseong-si, KR;
Sungmin Kim, Hwaseong-si, KR;
Juhun Park, Seoul, KR;
Yoonyoung Jung, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device including: a substrate including a first active region; a first active pattern on the first active region; a gate electrode intersecting the first active pattern and extending in a first direction; a first source/drain pattern on the first active pattern, the first source/drain pattern adjacent to the gate electrode; a first interlayer insulating layer covering the gate electrode and the first source/drain pattern; and an active contact penetrating the first interlayer insulating layer to be electrically connected to the first source/drain pattern, wherein the active contact extends in the first direction, wherein a top surface of the active contact includes: a first protrusion; a second protrusion; and a first depression between the first and second protrusions.