The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Dec. 20, 2019
Renesas Electronics Corporation, Tokyo, JP;
Yuji Takahashi, Ibaraki, JP;
Masaki Watanabe, Ibaraki, JP;
Masashi Sahara, Ibaraki, JP;
Kentaro Yamada, Ibaraki, JP;
Masaki Sakashita, Ibaraki, JP;
Shinichi Maeda, Ibaraki, JP;
Yoshiaki Yamada, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.