The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Mar. 02, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seokhoon Kim, Suwon-si, KR;
Dongmyoung Kim, Suwon-si, KR;
Kanghun Moon, Hwaseong-si, KR;
Hyunkwan Yu, Suwon-si, KR;
Sanggil Lee, Ansan-si, KR;
Seunghun Lee, Hwaseong-si, KR;
Sihyung Lee, Hwaseong-si, KR;
Choeun Lee, Pocheon-si, KR;
Edward Namkyu Cho, Seongnam-si, KR;
Yang Xu, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a gate spacer on at least on side surface of the gate structure, and a source/drain structure on the fin structure, wherein a topmost portion of a bottom surface of the gate spacer is lower than a topmost portion of a top surface of the fin structure, and a topmost portion of a top surface of the source/drain structure is lower than the topmost portion of the top surface of the fin structure.