The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Nov. 15, 2017
Applicant:

Centre National DE LA Recherche Scientifique, Paris, FR;

Inventors:

Julien Brault, Antibes, FR;

Mohamed Al Khalfioui, Nice, FR;

Benjamin Damilano, Nice, FR;

Jean-Michel Chauveau, Mougins, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/267 (2006.01); H01L 33/16 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02403 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02598 (2013.01); H01L 21/02609 (2013.01); H01L 29/2003 (2013.01); H01L 29/2203 (2013.01); H01L 29/267 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.


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