The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Apr. 20, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyeoncheol Park, Hwaseong-si, KR;
Chan Kwak, Yongin-si, KR;
Euncheol Do, Seoul, KR;
Giyoung Jo, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/495 (2006.01); H01G 4/12 (2006.01); H01L 49/02 (2006.01); H01G 4/30 (2006.01); H01G 4/012 (2006.01); C01G 35/00 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/55 (2013.01); C01G 35/006 (2013.01); C04B 35/495 (2013.01); H01G 4/012 (2013.01); H01G 4/1209 (2013.01); H01G 4/30 (2013.01); H01L 27/10835 (2013.01); H01L 28/91 (2013.01); C01P 2002/52 (2013.01); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2006/40 (2013.01);
Abstract
Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.(RbA)(BTa)O  <Formula 1> In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.