The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jul. 13, 2020
Nichia Corporation, Anan, JP;
Toshihiko Kishino, Anan, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A method of manufacturing a light-emitting device includes: growing a layered structure on a substrate, the layered structure comprising an n-side nitride semiconductor layer, a first light-emitting layer, and a first p-side nitride semiconductor layer; growing an upper n-type semiconductor layer over the first p-side nitride semiconductor layer; forming a protective film over the upper n-type semiconductor layer, the protective film containing an element that functions as an n-type impurity for the upper n-type semiconductor layer; heating at least the upper n-type semiconductor layer and the protective film; at least partially removing the protective film to expose a surface of the upper n-type semiconductor layer; and forming a first p-side electrode on the exposed surface of the upper n-type semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile