The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
May. 11, 2018
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G06F 3/042 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G06F 3/0412 (2013.01); G06F 3/0421 (2013.01); H01L 27/1462 (2013.01); H01L 27/14616 (2013.01); H01L 27/14629 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 27/14692 (2013.01); H01L 27/14698 (2013.01); G06F 2203/04103 (2013.01);
Abstract
A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.