The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Aug. 26, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Shibun Tsuda, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/02145 (2013.01); H01L 21/02148 (2013.01); H01L 21/32 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 21/84 (2013.01); H01L 27/092 (2013.01); H01L 27/1104 (2013.01); H01L 29/0847 (2013.01); H01L 29/41725 (2013.01); H01L 29/517 (2013.01);
Abstract
The first gate insulating film is an insulating film made of silicon oxide, and to which hafnium (Hf) is added without addition of aluminum (Al). Also, the second gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added without addition of hafnium. The third gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added. Further, the fourth gate insulating film is an insulating film made of silicon oxide, and to which hafnium is added. Accordingly, it is possible to reduce the power consumption of the semiconductor device.