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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11217605 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

Aug. 26, 2020

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Shibun Tsuda, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Alexander G Ghyka

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/02145 (2013.01); H01L 21/02148 (2013.01); H01L 21/32 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 21/823871 (2013.01); H01L 21/84 (2013.01); H01L 27/092 (2013.01); H01L 27/1104 (2013.01); H01L 29/0847 (2013.01); H01L 29/41725 (2013.01); H01L 29/517 (2013.01);
Abstract

The first gate insulating film is an insulating film made of silicon oxide, and to which hafnium (Hf) is added without addition of aluminum (Al). Also, the second gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added without addition of hafnium. The third gate insulating film is an insulating film made of silicon oxide, and to which aluminum is added. Further, the fourth gate insulating film is an insulating film made of silicon oxide, and to which hafnium is added. Accordingly, it is possible to reduce the power consumption of the semiconductor device.

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Tsuda, Shibun. (2022). Semiconductor device and method of manufacturing the same (U.S. Patent No. 11217605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11217605

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