The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Feb. 07, 2020
Tower Partners Semiconductor Co., Ltd., Toyama, JP;
Hiroshige Hirano, Nara, JP;
Hiroaki Kuriyama, Toyama, JP;
Takayuki Yamada, Toyama, JP;
Kenji Tateiwa, Osaka, JP;
Tower Partners Semiconductor Co., Ltd., Toyama, JP;
Abstract
An active region includes a body region in which first and second transistors are formed, a connection portion to which a potential of the body region is connected, and a lead portion that connects the body region and the connection portion. Source regions or drain regions of the first and second transistors formed in the body region are provided in a common region. Each of the lead portions extends from a corresponding channel region such that the lead portions are isolated from each other, and a gate electrode extends thereon. A width of the lead portion is narrower than a distance between corresponding ones of contact portions of the source regions and the drain regions of the first and second transistors. A width of the connection portion is equal to or narrower than a gate width of the gate electrode extending on the lead portion.