The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jan. 08, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Hideaki Yamakoshi, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 29/42344 (2013.01);
Abstract
A plurality of select transistors are formed in a first region of a semiconductor substrate, a plurality of memory transistors are formed in a second region of the semiconductor substrate, and a drain region of the select transistor and a source region of the memory transistor are electrically connected to form a memory cell. Here, the first region and the second region are arranged with each other in a gate width direction of the select transistor and the memory transistor.