The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jan. 07, 2020
Applicant:
Tcl China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventors:
Assignee:
TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 27/286 (2013.01); H01L 29/66969 (2013.01); H01L 51/0003 (2013.01);
Abstract
The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.