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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11217453 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

Jun. 17, 2020

Methods and devices related to radio frequency devices

Applicant:

Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;

Inventors:

Hans Taddiken, Munich, DE;

Christian Butschkow, Munich, DE;

Andrea Cattaneo, Taufkirchen, DE;

Henning Feick, Dresden, DE;

Dominik Heiss, Munich, DE;

Christoph Kadow, Gauting, DE;

Uwe Seidel, Munich, DE;

Valentyn Solomko, Munich, DE;

Anton Steltenpohl, Munich, DE;

Assignee:

INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KG, Dresden, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01); H01L 27/08 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/02016 (2013.01); H01L 21/26506 (2013.01); H01L 21/3226 (2013.01); H01L 21/76 (2013.01); H01L 21/76264 (2013.01); H01L 23/3171 (2013.01); H01L 23/58 (2013.01); H01L 27/08 (2013.01); H01L 27/1203 (2013.01); H01L 23/291 (2013.01);
Abstract

A method includes providing a semiconductor substrate having a first side and a second side opposite to the first side, forming at least one radio frequency device at the first side; thinning the semiconductor substrate from the second side; and processing the second side of the thinned semiconductor substrate to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device.

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