The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Apr. 05, 2019
Applicants:

Commissariat Á L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);

Inventors:

Elisa Vianello, Grenoble, FR;

Etienne Nowak, Grenoble, FR;

Binh Quang Le, San Jose, CA (US);

Subhasish Mitra, Menlo Park, CA (US);

Fan Tony Wu, Redwood City, CA (US);

Philip Wong, Stanford, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/004 (2013.01); G11C 2213/79 (2013.01);
Abstract

The present disclosure relates to a method of programming resistive memory cells of a resistive memory, the method comprising: applying, by a programming circuit based on a first target resistive state, an initial resistance modification to a first cell of the resistive memory to change its resistance from an initial resistive state to a first new resistance; comparing, by the programming circuit, the first new resistance of the first cell with a resistance range of the first target resistive state and with a target resistance range associated with the first target resistive state; and if it is determined that the first new resistance is outside the resistance range of the target resistive state and inside the target resistance range, applying by the programming circuit one or more further resistance modifications to the first cell to increase or decrease its resistance.


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