Three-dimensional neuromorphic device including switching element and resistive element

Abstract

A neuromorphic device, including a controller configured to generate ternary data by converting each bit of binary data into a ternary bit; and a memory device configured to store the ternary data, wherein the memory device includes: a first memory cell array including first memory cells formed between lower word lines and bit lines, wherein a first memory cell of the first memory cells includes a first switching element and a first resistive element; and a second memory cell array including second memory cells formed between upper word lines and the bit lines, wherein a second memory cell of the second memory cells includes a second switching element and a second resistive element, and wherein each bit of the ternary data is identified by a combination of a data bit stored in the first memory cells and a mask bit stored in the second memory cells.