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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11214711 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

May. 06, 2016

Polishing composition, method for producing same, and polishing method

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Yoshihiro Nojima, Annaka, JP;

Mitsuhito Takahashi, Annaka, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

James E McDonough

Int. Cl.
CPC ...
B24D 3/02 (2006.01); C09K 3/14 (2006.01); C09G 1/02 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); C01B 15/01 (2006.01); C01G 25/02 (2006.01); C08L 29/04 (2006.01); C08L 33/02 (2006.01); C08L 33/26 (2006.01); C08L 71/02 (2006.01); C08L 81/08 (2006.01); C09G 1/16 (2006.01); B24D 3/00 (2006.01); B24D 11/00 (2006.01); B24D 18/00 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C01B 15/01 (2013.01); C01G 25/02 (2013.01); C08L 29/04 (2013.01); C08L 33/02 (2013.01); C08L 33/26 (2013.01); C08L 71/02 (2013.01); C08L 81/08 (2013.01); C09G 1/16 (2013.01); C09K 3/1463 (2013.01); H01L 21/02024 (2013.01); H01L 21/304 (2013.01); C01P 2002/02 (2013.01); C01P 2002/30 (2013.01); C01P 2004/32 (2013.01); C01P 2004/64 (2013.01); C01P 2006/80 (2013.01);
Abstract

The present invention is a polishing composition, containing zirconium oxide as abrasive grains, the polishing composition having pH of 11.0 or more and less than 12.5, the zirconium oxide having element concentrations of sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, manganese, nickel, copper, zinc, lead, and cobalt of less than 1 ppm each. There can be provided a polishing composition that enables semiconductor substrates having high flatness not only in the inner circumferential portion but also in the outer circumferential portion with little contamination due to metal impurities to be obtained at high productivity.

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