The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Jun. 19, 2019
Applicant:

Equal1.labs Inc., Fremont, CA (US);

Inventors:

Dirk Robert Walter Leipold, Fremont, CA (US);

George Adrian Maxim, Saratoga, CA (US);

Michael Albert Asker, San Jose, CA (US);

Assignee:

Equal1.Labs Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 10/00 (2011.01); G06N 10/00 (2019.01); H01L 29/12 (2006.01); G02F 1/017 (2006.01); H01L 29/66 (2006.01); H03K 19/195 (2006.01); B82Y 15/00 (2011.01); G06F 1/20 (2006.01); G06F 11/07 (2006.01); G06F 15/16 (2006.01); G06N 99/00 (2019.01); G11C 19/32 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 27/18 (2006.01); H01L 29/15 (2006.01); H01L 29/417 (2006.01); H01L 33/04 (2010.01); H01L 39/22 (2006.01); H03M 1/34 (2006.01); H03M 1/66 (2006.01); H03K 3/38 (2006.01); H03M 13/15 (2006.01);
U.S. Cl.
CPC ...
B82Y 10/00 (2013.01); B82Y 15/00 (2013.01); G02F 1/01725 (2013.01); G06F 1/20 (2013.01); G06F 11/0724 (2013.01); G06F 11/0751 (2013.01); G06F 11/0793 (2013.01); G06F 15/16 (2013.01); G06N 10/00 (2019.01); G06N 99/00 (2013.01); G11C 19/32 (2013.01); H01L 21/02694 (2013.01); H01L 27/0883 (2013.01); H01L 27/18 (2013.01); H01L 29/122 (2013.01); H01L 29/157 (2013.01); H01L 29/41791 (2013.01); H01L 29/66977 (2013.01); H01L 29/66984 (2013.01); H01L 33/04 (2013.01); H01L 39/221 (2013.01); H01L 39/228 (2013.01); H03K 3/38 (2013.01); H03K 19/195 (2013.01); H03M 1/34 (2013.01); H03M 1/66 (2013.01); H03M 13/1575 (2013.01); G02F 1/01791 (2021.01);
Abstract

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.


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