The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2022

Filed:

Oct. 23, 2020
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Kurt Rasmussen, Herlev, DK;

Jan Tue Ravnkilde, Hedehusene, DK;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/00 (2006.01); B81B 7/00 (2006.01); H04R 19/04 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0061 (2013.01); B81B 7/0048 (2013.01); B81C 1/00158 (2013.01); B81C 1/00531 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01); H04R 2201/003 (2013.01);
Abstract

In an embodiment a MEMS microphone includes a substrate, a shield layer, a central insulation layer and a membrane, wherein the substrate has an upper surface with a first opening therein, wherein the shield layer is arranged between the upper surface of the substrate and the membrane, the shield layer having a second opening, wherein the central insulation layer is arranged between the shield layer and the membrane, the shield layer comprising a dielectric bulk material having a third opening and an etch stopper forming an edge of the central insulation layer towards the third opening such that the dielectric bulk material of the central insulation layer is completely enclosed between the shield layer, the etch stopper and the membrane, and wherein all openings are arranged one above another to form a common sound channel to the membrane.


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