The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

May. 28, 2020
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Tiejun Dai, Santa Clara, CA (US);

Keiji Mabuchi, Los Altos, CA (US);

Zhe Gao, San Jose, CA (US);

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/235 (2006.01); H01L 27/146 (2006.01); H04N 5/345 (2011.01); H01L 27/092 (2006.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/2355 (2013.01); H01L 27/0922 (2013.01); H01L 27/14612 (2013.01); H04N 5/345 (2013.01); H04N 5/378 (2013.01);
Abstract

A pixel cell includes a first subpixel and a plurality of second subpixels. Each subpixel includes a photodiode to photogenerate image charge in response to incident light. Image charge is transferred from the first subpixel to a floating diffusion through a first transfer transistor. Image charge is transferred from the plurality of second subpixels to the floating diffusion through a plurality of second transfer transistors. An attenuation layer is disposed over the first subpixel. The first subpixel receives the incident light through the attenuation layer. The plurality of second subpixels receive the incident light without passing through the attenuation layer. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A capacitor is coupled to the DFD transistor.


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