The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jul. 15, 2020
The George Washington University, Washington, DC (US);
Boqun Dong, Arlington, VA (US);
Mona Zaghloul, Washington, DC (US);
The George Washington University, Washington, DC (US);
Abstract
A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO/ZnO islands, each including a SiObuffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiObuffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.