The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Oct. 14, 2011
Applicants:

Stephen R. Forrest, Ann Arbor, MI (US);

Brian E. Lassiter, Ypsilanti, MI (US);

Jun Y. Lee, Seongnam-si, KR;

Kyoung S. Yook, Yongin-si, KR;

Soon O. Jeon, Seoul, KR;

Byung D. Chin, Seongnam-si, KR;

Inventors:

Stephen R. Forrest, Ann Arbor, MI (US);

Brian E. Lassiter, Ypsilanti, MI (US);

Jun Y. Lee, Seongnam-si, KR;

Kyoung S. Yook, Yongin-si, KR;

Soon O. Jeon, Seoul, KR;

Byung D. Chin, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); H01L 51/00 (2006.01); B82Y 10/00 (2011.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0012 (2013.01); B82Y 10/00 (2013.01); H01L 51/001 (2013.01); H01L 51/0046 (2013.01); H01L 51/0072 (2013.01); H01L 51/424 (2013.01); H01L 51/4246 (2013.01); H01L 51/4253 (2013.01); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11);
Abstract

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.


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