The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Feb. 20, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Geoffrey Charles Gardner, West Lafayette, IN (US);

Asbjørn Cennet Cliff Drachmann, Copenhagen, DK;

Charles Masamed Marcus, Copenhagen, DK;

Michael James Manfra, West Lafayette, IN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 39/22 (2006.01); H01L 39/02 (2006.01); H01L 39/12 (2006.01);
U.S. Cl.
CPC ...
H01L 39/24 (2013.01); H01L 39/025 (2013.01); H01L 39/12 (2013.01); H01L 39/22 (2013.01); H01L 39/223 (2013.01); H01L 39/2406 (2013.01); H01L 39/2493 (2013.01); H01L 39/228 (2013.01);
Abstract

A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.


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