The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Jun. 22, 2020
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Hao-Min Ku, Hsinchu, TW;

You-Hsien Chang, Hsinchu, TW;

Shih-I Chen, Hsinchu, TW;

Fu-Chun Tsai, Hsinchu, TW;

Hsin-Chih Chiu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/683 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 33/0095 (2013.01); H01L 33/62 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.


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