The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Mar. 05, 2020
Applicant:
Array Photonics, Inc., Tempe, AZ (US);
Inventors:
Ferran Suarez, Chandler, AZ (US);
Ding Ding, Chandler, AZ (US);
Aymeric Maros, San Francisco, CA (US);
Assignee:
ARRAY PHOTONICS, INC., Tempe, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/03044 (2013.01); H01L 31/03048 (2013.01);
Abstract
Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.