The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Sep. 20, 2019
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Joon Goo Hong, Austin, TX (US);
Mark Rodder, Dallas, TX (US);
Abstract
Apparatus and method are provided. The apparatus includes at least one field effect transistor (FET), wherein the at least one FET comprises at least one gate overlaying at least one non-linear fin, wherein the non-linear fin is formed via modulating a mandrel by producing cut-outs in the mandrel via optical proximity correction (OPC). The method includes receiving a semiconductor wafer, forming source and drain areas for each of at least one FET on the semiconductor wafer; and forming at least one gate overlaying at least one non-linear fin in each of the at least one FET, wherein the non-linear fin is formed via modulating a mandrel by producing cut-outs in the mandrel via OPC.