The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Aug. 28, 2020
University of Electronic Science and Technology of China, Chengdu, CN;
Ming Qiao, Chengdu, CN;
Zhengkang Wang, Chengdu, CN;
Shida Dong, Chengdu, CN;
Bo Zhang, Chengdu, CN;
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, Chengdu, CN;
Abstract
A power MOS device with low gate charge and a method for manufacturing the same. The device includes an M-shaped gate structure, which reduces the overlapped area between control gate electrode and split gate electrode. A low-k material is introduced to reduce dielectric constant of the isolation medium material. The combination of the M-shaped gate structure and low-k material can reduce parasitic capacitance Cgs of the device, thereby increasing switching speed and reducing switching losses.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile