The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Oct. 29, 2018
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
Zhendong Mao, Jiangsu, CN;
Yuanlin Yuan, Jiangsu, CN;
Lei Liu, Jiangsu, CN;
Wei Liu, Jiangsu, CN;
Rui Wang, Jiangsu, CN;
Yi Gong, Jiangsu, CN;
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
Provided is a trench-type power transistor. The trench-type power transistor includes a source, a drain, a first gate, a second gate, a body diode and a body region contact diode. The body diode and the body region contact diode are connected in series. The first gate controls turn-on and turn-off of a first current channel through a gate voltage, the second gate is connected to the source and controls turn-on and turn-off of a second current channel through a source voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile