The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jan. 23, 2019
Omnivision Technologies, Inc., Santa Clara, CA (US);
Xianmin Yi, Menlo Park, CA (US);
Jingming Yao, San Jose, CA (US);
Philip Cizdziel, San Jose, CA (US);
Eric Webster, Mountain View, CA (US);
Duli Mao, Sunnyvale, CA (US);
Zhiqiang Lin, San Jose, CA (US);
Jens Landgraf, Bloomfield Hills, MI (US);
Keiji Mabuchi, Los Altos, CA (US);
Kevin Johnson, Kildeer, IL (US);
Sohei Manabe, San Jose, CA (US);
Dyson H. Tai, San Jose, CA (US);
Lindsay Grant, Campbell, CA (US);
Boyd Fowler, Sunnyvale, CA (US);
OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);
Abstract
A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.