The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Feb. 25, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Chia-Lin Chang, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10808 (2013.01); H01L 21/31111 (2013.01); H01L 23/5283 (2013.01); H01L 27/10855 (2013.01); H01L 28/90 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor includes a semiconductor substrate and pillar type capacitors. The semiconductor substrate includes first connecting pads and second connecting pads. The second connecting pads are disposed on the first connecting pads respectively, and the pillar type capacitors are disposed on the second connecting pads respectively. A first ends of the pillar type capacitors are connected to the second connecting pads respectively, and a second ends of the pillar type capacitors area at the opposite side of the first ends. The distance between the first end and the second end of each of the pillar type capacitors is from 1 micrometer to 1.8 micrometer. A manufacturing method is also provided.


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