The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Nov. 19, 2019
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Hubei, CN;
Xing Hu, Hubei, CN;
Abstract
A first wafer, a method of fabricating thereof and a wafer stack are disclosed. The first wafer includes a first substrate, a first dielectric layer on the first substrate, first metal layers embedded in the first dielectric layer, first switching holes extending partially through the first dielectric layer and exposing the first metal layers, a first interconnection layer filling up the first switching holes and electrically connected to the first metal layers, a first insulating layer residing on surfaces of both the first dielectric layer and the first interconnection layer, first contact holes extending through the first insulating layer and exposing the first interconnection layer, and a second interconnection layer filling up the first contact holes and electrically connected to the first interconnection layer. Filling the first contact holes and the first switching holes with different interconnection layers reduces the difficulty in fabricating interconnection structures for the first metal layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile