The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Feb. 28, 2019
Applicant:
Abb Power Grids Switzerland Ag, Baden, CH;
Inventors:
Giovanni Alfieri, Baden, CH;
Vinoth Sundaramoorthy, Wettingen, CH;
Assignee:
ABB Power Grids Switzerland AG, Baden, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/872 (2013.01);
Abstract
A method for p-type doping of a silicon carbide layer includes first implantation step of implanting aluminum dopants into a preselected region of the silicon carbide layer by ion implantation, an annealing step of annealing the silicon carbide layer after performing the first implantation step, a second implantation step of implanting beryllium dopants into the preselected region by ion implantation before the annealing step. A ratio of the total aluminum dose in the first implantation step to the total beryllium dose in the second implantation step is in a range between 0.1 and 10.