The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Oct. 04, 2019
Applicant:

Vanderbilt University, Nashville, TN (US);

Inventors:

Jason G. Valentine, Nashville, TN (US);

Richard F. Haglund, Nashville, TN (US);

Zhihua Zhu, Nashville, TN (US);

Austin Howes, Nashville, TN (US);

Assignee:

Vanderbuilt University, Nashville, TN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/35 (2006.01); G02F 1/355 (2006.01);
U.S. Cl.
CPC ...
G02F 1/3523 (2013.01); G02F 1/3501 (2013.01); G02F 1/3556 (2013.01); G02F 1/3558 (2013.01); G02F 1/3507 (2021.01); G02F 1/3509 (2021.01); G02F 2202/30 (2013.01); G02F 2203/15 (2013.01); G02F 2203/52 (2013.01);
Abstract

According to some aspects, a transmissive and all-dielectric optical component/limiter with great cutoff efficiency using Vanadium Dioxide (VO) as the active component is disclosed. In some embodiments, Vanadium dioxide is used for an optical limiter due to the large contrast in optical constants upon undergoing the semiconductor to metal phase transition. When triggered optically, this transition occurs within 60 fs, making the device suitable for an ultrafast laser environment. In addition, the phase transition threshold is tunable by applying stress or doping; therefore, the device cutoff intensity can be adjusted to fulfill specific requirements.


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