The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2021

Filed:

Sep. 24, 2019
Applicant:

University of Southampton, Highfield, GB;

Inventors:

Xia Chen, Highfield, GB;

Milan Milosevic, Highfield, GB;

Graham Trevor Reed, Highfield, GB;

David John Thomson, Highfield, GB;

Assignee:

UNIVERSITY OF SOUTHAMPTON, Highfield, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/34 (2006.01); G02B 6/134 (2006.01); C23C 14/48 (2006.01); G01M 11/00 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/1347 (2013.01); C23C 14/48 (2013.01); G01M 11/35 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12147 (2013.01); G02B 2006/12169 (2013.01);
Abstract

The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.


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